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Phosphoric Acid (Electronic Grade)

H₃PO₄ · CAS 7664-38-2

Electronic grade phosphoric acid (85% w/w) for hot phosphoric acid (HPA) selective etching of silicon nitride (Si₃N₄) over silicon dioxide — the critical etch step in STI (shallow trench isolation) and DRAM capacitor formation. Extreme selectivity (Si₃N₄:SiO₂ > 50:1) at 155–165°C.

Hot phosphoric acid (HPA) Si₃N₄ selective etchSTI nitride removal etchDRAM capacitor nitride etchSelf-aligned contact (SAC) nitride etchPost-CMP Si₃N₄ clean

Molecular Weight

98.00 g/mol

Boiling Point

158 °C (85%)

Density

1.685 g/mL (85%)

Molecular Formula

H₃PO₄
CAS Number7664-38-2
Boiling Point158 °C (85%)
Density1.685 g/mL (85%)
MW98.00 g/mol

Available Grades

G2G3G4

Analytical Specification

Analytical Specification Table

All values represent maximum allowable limits unless noted ≥. A lot-specific Certificate of Analysis (CoA) with ICP-MS, LPC, and GC data is issued for every shipment. Full data packages available on request.

ParameterTest MethodUnitG4
AssayTitration%84.5–85.5
Total MetalsICP-MSppb ea.≤0.5
Fe (Iron)ICP-MSppb≤0.2
Cl⁻ (Chloride)ICppb≤50
SO₄²⁻ (Sulfate)ICppb≤100

★ G5 = SEMI C1 Tier D (6N grade). All metal values by ICP-MS. Particle counts by in-line LPC during ISO Class 3 fill. CoA available on request.

Grade Comparison

G1 → G5 Purity Scale

Select the grade that matches your process node and contamination budget. Every grade is available from PureTech with full lot CoA and ICP-MS data.

Electronic Grade Purity Comparison — SEMI C1 StandardG1 → G5
GradePurity (GC)Metals (ICP)ParticlesWater (KF)Process Node
G1
≥99.0%
≤50 ppb≤500/mL≤500 ppmPCB / Display / Solar
G2
≥99.9%
≤10 ppb≤100/mL≤50 ppm≥180nm Mature Node
G3
≥99.99%
≤2 ppb≤20/mL≤20 ppm45–180nm
G4
≥99.999%
≤0.5 ppb≤10/mL≤10 ppm7–45nm
G5
≥99.9999%
<0.1 ppb≤5/mL≤5 ppm<7nm / EUV / Marangoni

All grades tested by ICP-MS (28 elements), in-line LPC (ISO Class 3 fill), and Karl Fischer titration. G5 = SEMI C1 Tier D. Full CoA per lot.  Request CoA template →

Application Areas

Where Phosphoric Acid Is Used

Semiconductor Process

  • Hot phosphoric acid (HPA) Si₃N₄ selective etch
  • STI nitride removal etch
  • DRAM capacitor nitride etch
  • Self-aligned contact (SAC) nitride etch
  • Post-CMP Si₃N₄ clean

Laboratory & Analytical

  • Buffer solution preparation
  • mobile phase modifier (ion pair HPLC)

Industrial & Other

  • PCB copper pre-treatment
  • fertilizer production
  • food acidulant (E338)

Battery & Energy Storage

Li-ion battery cathode precursor (LiFePO₄ synthesis)

Packaging & Supply

Available Container Formats

1 L
5 L
20 L
200 L

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Technical Quote

Our application engineers respond with full CoA data, ICP-MS reports, and supply chain details within one business day.