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PGMEAApplication Guide

PGMEA for EUV & ArF Immersion Lithography

PGMEA is the dominant primary solvent in all advanced photoresist formulations from KrF through EUV, maintained by its unique combination of polymer solvency, controlled evaporation, and TMAH developer compatibility.

Why purity matters: EUV resist solvents are in direct contact with scanner optics via outgassing. Any metallic impurity deposits on EUV reflective optics during exposure. Total metals below 0.1 ppb (G5) is mandatory for EUV resist formulation.

Specification Requirements

Critical Parameters for EUV & ArF Immersion Lithography

Each parameter directly impacts process outcome — understand why each limit exists.

ParameterRequirementWhy This Limit Exists
Assay (GC)≥99.0% (G1) to ≥99.999% (G5)Minimizes organic by-product background in resist film
Total Metals (ICP-MS)≤50 ppb (G1) to <0.1 ppb (G5)EUV optic contamination risk from outgassed metal species
Acetic Acid (GC)≤50 ppm (G1) to ≤5 ppm (G5)Acidity affects PAG stability in chemically amplified resists
Water (KF)≤500 ppm (G1) to ≤10 ppm (G5)Excess water affects resist film thickness uniformity during spin
Peroxide (Iodometric)≤5 ppm (G1) to ≤0.5 ppm (G5)Peroxides degrade polymer backbone and reduce resist shelf life

Grade Selection

Which Grade Do You Need?

Match your process node and contamination budget to the right grade — every grade available with full CoA.

G1
≥99.0%, metals ≤50 ppb

I-line (365nm), G-line (436nm), TFT-LCD, PCB dry film

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G2/G3
≥99.9–99.99%, metals ≤10–2 ppb

KrF 248nm, 90–180nm node, mature DRAM

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G4
≥99.99%, metals ≤0.5 ppb

ArF 193nm, ArF immersion (193i), 14–90nm

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G5
≥99.999%, metals <0.1 ppb

EUV 13.5nm, high-NA EUV, metal oxide resist (MOR)

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Electronic Grade Purity Comparison — SEMI C1 StandardG1 → G5
GradePurity (GC)Metals (ICP)ParticlesWater (KF)Process Node
G1
≥99.0%
≤50 ppb≤500/mL≤500 ppmPCB / Display / Solar
G2
≥99.9%
≤10 ppb≤100/mL≤50 ppm≥180nm Mature Node
G3
≥99.99%
≤2 ppb≤20/mL≤20 ppm45–180nm
G4
≥99.999%
≤0.5 ppb≤10/mL≤10 ppm7–45nm
G5
≥99.9999%
<0.1 ppb≤5/mL≤5 ppm<7nm / EUV / Marangoni

All grades tested by ICP-MS (28 elements), in-line LPC (ISO Class 3 fill), and Karl Fischer titration. G5 = SEMI C1 Tier D. Full CoA per lot.  Request CoA template →

Technical FAQ

Expert Answers

Q

Is PGMEA or PGME better as EBR solvent?

A

Both are used for EBR, often as mixtures. PGME (BP 120°C) evaporates faster and is preferred for EBR where rapid solvent removal is needed. PGMEA (BP 146°C) is preferred as the primary resist solvent for uniform film formation. Many fabs use PGME/PGMEA (10–30% PGME) mixtures for EBR.

Q

What is SEMI C12?

A

SEMI C12 applies specifically to photoresist process solvents including PGMEA, PGME, n-propyl acetate, and n-butyl acetate. Beyond C1 metal and particle limits, C12 adds: acidity as acetic acid, peroxide content, color (APHA), and photoresist compatibility testing. PureTech PGMEA G4/G5 is fully SEMI C12 certified.

Related Search Topics

PGMEA for EUV lithographyPGMEA photoresist solventArF immersion PGMEAEUV resist solvent specificationPGMEA SEMI C12buy PGMEA semiconductor

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EUV & ArF Immersion Lithography

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